型号描述
| 型号 | 生产品牌/企业名称 | 功能参数描述 | LOGO | 操作 |
|---|---|---|---|---|
| GT5040 | HIROSEHirose Electric Company 广濑日本广濑电机株式会社 |
USCAR specified connector as SAE/USCAR-19 | |
|
| GT50JR21(STA1,E,S) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |
Discrete IGBTs Silicon N-Channel IGBT | |
|
| GT50J121_06 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |
Silicon N Channel IGBT High Power Switching Applications | |
|
| GT50J122 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |
Current Resonance Inverter Switching Application | |
|
| GT50J101 | TOSHIBA |
|
||
| GT50S101 | TOSHIBA |
|
||
| GT50J328 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |
Bipolar Small-Signal Transistors | |
|
| GT50J123 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |
Discrete IGBTs Silicon N-Channel IGBT | |
|
| GT50JR22(STA1,E,S) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |
Discrete IGBTs Silicon N-Channel IGBT | |
|
| GT50J327 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application | |
型号货源

