型号描述
| 型号 | 生产品牌/企业名称 | 功能参数描述 | LOGO | 操作 |
|---|---|---|---|---|
| HN1B01FDW1T1G | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |
Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount |  |
|
| HN1B01FDW1T1 | ONSEMI |
|
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| HN1B01F-GR(TE85L,F | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |
Silicon NPN Epitaxial Type (PCT Process) Audio-Frequency General-Purpose Amplifier Applications |  |
|
| HN1B01F_07 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |
Silicon NPN Epitaxial Type (PCT Process) Audio-Frequency General-Purpose Amplifier Applications | |
|
| HN1B01F-Y(TE85L,F) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |
Audio-Frequency General-Purpose Amplifier Applications | |
|
| HN1B01FU-Y | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |
Audio-Frequency General-Purpose Amplifier Applications | |
|
| HN1B01FU-GR | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |
Audio-Frequency General-Purpose Amplifier Applications | |
|
| HN1B01FUGRLFT | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications | |
|
| HN1B01FU_07 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications | |
|
| HN1B01FDW1T1 | 其他 |
|
型号货源
