型号描述
| 型号 | 生产品牌/企业名称 | 功能参数描述 | LOGO | 操作 |
|---|---|---|---|---|
| LL1608-FH1N2S | freescaleFreescaleiscreatingasmarter 飞思卡尔飞思卡尔 |
Heterojunction Bipolar Transistor Technology (InGaP HBT) | |
|
| LL1608-FH22N0S | freescaleFreescaleiscreatingasmarter 飞思卡尔飞思卡尔 |
Heterojunction Bipolar Transistor Technology (InGaP HBT) | |
|
| LL1608-FSL2N2S | MURATA |
|
||
| LL1608--FSL18NJ | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |
Gallium Arsenide pHEMT RF Power Field Effect Transistor | |
|
| LL1608--FH8N2S | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |
Gallium Arsenide pHEMT RF Power Field Effect Transistor | |
|
| LL1608--FH6N8S | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |
Gallium Arsenide pHEMT RF Power Field Effect Transistor | |
|
| LL1608--FH5N6S | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |
Gallium Arsenide pHEMT RF Power Field Effect Transistor | |
|
| LL1608--FH3N9S | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |
Gallium Arsenide pHEMT RF Power Field Effect Transistor | |
|
| LL1608-FSL8N2JL | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |
Heterojunction Bipolar Transistor Technology (InGaP HBT) | |
|
| LL1608-FSL1N2S | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |
Heterojunction Bipolar Transistor Technology (InGaP HBT) | |
型号货源
