型号描述
| 型号 | 生产品牌/企业名称 | 功能参数描述 | LOGO | 操作 |
|---|---|---|---|---|
| MJD112G | CDILSTMicroelectronics 意法半导体意法半导体 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |  |
|
| MJD112G | DCCOMSTMicroelectronics 意法半导体意法半导体 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |  |
|
| MJD112G | FairchildSTMicroelectronics 意法半导体意法半导体 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |  |
|
| MJD112_06 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |
NPN Silicon Darlington Transistor | |
|
| MJD112G | FOSHANSTMicroelectronics 意法半导体意法半导体 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |  |
|
| MJD112G | FSSTMicroelectronics 意法半导体意法半导体 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |  |
|
| MJD112G | ISCSTMicroelectronics 意法半导体意法半导体 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |  |
|
| MJD112_17 | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |
isc Silicon NPN Darlington Power Transistor | |
|
| MJD112G | JIANGSUSTMicroelectronics 意法半导体意法半导体 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |  |
|
| MJD112L | KECKEC CORPORATION KEC株式会社 |
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) |  |
型号货源
