型号描述
| 型号 | 生产品牌/企业名称 | 功能参数描述 | LOGO | 操作 |
|---|---|---|---|---|
| NB003PG | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO. LTD. 杜因特深圳市杜因特半导体有限公司 |
P-Channel MOSFET uses advanced trench technology |  |
|
| NB06QSA065 | KSSKyocera Kinseki Corpotation Kyocera Kinseki Corpotation |
Schottky Barrier Diode |  |
|
| NB06QSA045 | KSSKyocera Kinseki Corpotation Kyocera Kinseki Corpotation |
Schottky Barrier Diode | |
|
| NB06QSA035 | KSSKyocera Kinseki Corpotation Kyocera Kinseki Corpotation |
Schottky Barrier Diode | |
|
| NB06HSA12 | KSSKyocera Kinseki Corpotation Kyocera Kinseki Corpotation |
Schottky Barrier Diode | |
|
| NB06HSA08 | KSSKyocera Kinseki Corpotation Kyocera Kinseki Corpotation |
Schottky Barrier Diode | |
|
| NB06HSA065 | KSSKyocera Kinseki Corpotation Kyocera Kinseki Corpotation |
Schottky Barrier Diode | |
|
| NB06HA20 | KSSKyocera Kinseki Corpotation Kyocera Kinseki Corpotation |
Schottky Barrier Diode | |
|
| NB06HA15 | KSSKyocera Kinseki Corpotation Kyocera Kinseki Corpotation |
Schottky Barrier Diode | |
|
| NB06QSA035_15 | NINational Instruments Inc. National Instruments Inc. |
SBD |  |
型号货源
| 型号 | 品牌 | 封装 | 批号 | 库存数量 | 备注 | 供应商 | 询价 |
|---|---|---|---|---|---|---|---|
| 16580 | 原装 | 深圳市泰克微科技有限公司 |
  |