型号描述
| 型号 | 生产品牌/企业名称 | 功能参数描述 | LOGO | 操作 |
|---|---|---|---|---|
| SM260A-E | LRC乐山无线电 乐山无线电乐山无线电股份有限公司 |
Schottky Barrier Rectifiers Reverse Voltage 20 to100V Forward Current 2.0A | |
|
| SM260AF | SECOSSeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnologie GmbH |
20V ~200V 2.0 Amp Surface Mount Schottky Barrier Rectifiers | |
|
| SM260HT | SECOSSeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnologie GmbH |
Voltage 40 60 100V 2.0 Amp Surface Mount Schottky Barrier Rectifiers | |
|
| SM260BM | SECOSSeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnologie GmbH |
20 ~ 200V 2A Surface Mount Schottky Barrier Rectifiers | |
|
| SM2609PSCC-TRG | SINOPWERSinopower Semiconductor Inc Sinopower Semiconductor Inc |
P-Channel Enhancement Mode MOSFET | |
|
| SM2609PSC | SINOPWERSinopower Semiconductor Inc Sinopower Semiconductor Inc |
P-Channel Enhancement Mode MOSFET | |
|
| SM2608NSCC-TRG | SINOPWERSinopower Semiconductor Inc Sinopower Semiconductor Inc |
N-Channel Enhancement Mode MOSFET | |
|
| SM2608NSC | SINOPWERSinopower Semiconductor Inc Sinopower Semiconductor Inc |
N-Channel Enhancement Mode MOSFET | |
|
| SM2607CSCC-TRG | SINOPWERSinopower Semiconductor Inc Sinopower Semiconductor Inc |
Dual Enhancement Mode MOSFET (N- and P-Channel) | |
|
| SM2607CSC | SINOPWERSinopower Semiconductor Inc Sinopower Semiconductor Inc |
Dual Enhancement Mode MOSFET (N- and P-Channel) | |
型号货源

