型号描述
| 型号 | 生产品牌/企业名称 | 功能参数描述 | LOGO | 操作 |
|---|---|---|---|---|
| SSD40N04_15 | SECOSSeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnologie GmbH |
N-Ch Enhancement Mode Power MOSFET | |
|
| SSD45N | LSTDLaird Tech Smart Technology Laird Tech Smart Technology |
Power supply voltage with respect to ground | |
|
| SSD40N10J | SECOSSeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnologie GmbH |
N-Ch Enhancement Mode Power MOSFET | |
|
| SSD40P04-20DE | SECOSSeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnologie GmbH |
P-Ch Enhancement Mode Power MOSFET | |
|
| SSD40NBT | LSTDLaird Tech Smart Technology Laird Tech Smart Technology |
Regulatory operational requirements are included with this document | |
|
| SSD40N10-30D | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO. LTD. 杜因特深圳市杜因特半导体有限公司 |
N-Channel MOSFET uses advanced SGT technology | |
|
| SSD40N04-20D | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO. LTD. 杜因特深圳市杜因特半导体有限公司 |
N-Channel MOSFET uses advanced trench technology | |
|
| SSD40N03 | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO. LTD. 杜因特深圳市杜因特半导体有限公司 |
N-Channel MOSFET uses advanced trench technology | |
|
| SSD40N03 | VBSEMIVBsemi Electronics Co. Ltd 微碧半導體微碧半导体(台湾)有限公司 |
N-Channel 30-V (D-S) MOSFET | |
|
| SSD40P04J | SECOSSeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnologie GmbH |
P-Ch Enhancement Mode Power MOSFET | |
型号货源

