型号描述
| 型号 | 生产品牌/企业名称 | 功能参数描述 | LOGO | 操作 |
|---|---|---|---|---|
| EMD10N70F | EXCELLIANCEExcelliance MOS Corp. Excelliance MOS Corp. |
N??hannel Logic Level Enhancement Mode Field Effect Transistor | |
|
| EMD10N06E | EXCELLIANCEExcelliance MOS Corp. Excelliance MOS Corp. |
N??hannel Logic Level Enhancement Mode Field Effect Transistor | |
|
| EMD10N06A | EXCELLIANCEExcelliance MOS Corp. Excelliance MOS Corp. |
N??hannel Logic Level Enhancement Mode Field Effect Transistor | |
|
| EMD38T2R | ROHMRohm Semiconductor 罗姆罗姆半导体集团 |
Packaging specifications | |
|
| EMD-FL-V-300 | PhoenixPhoenix Contact 菲尼克斯电气德国菲尼克斯电气集团 |
Adjustable threshold values | |
|
| EMD3D256M16G2-150CBS1R | EVERSPINEverspin Technologies Inc. Everspin科技 |
256Mb ST-DDR3 Spin-transfer Torque MRAM | |
|
| EMD3D256M16G2-150CBS1 | EVERSPINEverspin Technologies Inc. Everspin科技 |
256Mb ST-DDR3 Spin-transfer Torque MRAM | |
|
| EMD3D256M16BS1 | EVERSPINEverspin Technologies Inc. Everspin科技 |
256Mb ST-DDR3 Spin-transfer Torque MRAM | |
|
| EMD3D256M08G1-150CBS1R | EVERSPINEverspin Technologies Inc. Everspin科技 |
256Mb ST-DDR3 Spin-transfer Torque MRAM | |
|
| EMD3D256M08G1-150CBS1 | EVERSPINEverspin Technologies Inc. Everspin科技 |
256Mb ST-DDR3 Spin-transfer Torque MRAM | |
型号货源
| 型号 | 品牌 | 封装 | 批号 | 库存数量 | 备注 | 供应商 | 询价 |
|---|---|---|---|---|---|---|---|
| 65900 | 原装 | 深圳市荣科微科技有限公司销售九部 |

