型号描述
| 型号 | 生产品牌/企业名称 | 功能参数描述 | LOGO | 操作 |
|---|---|---|---|---|
| S11500-1007_15 | HAMAMATSUHamamatsu Photonics Co. Ltd. 滨松光子滨松光子学株式会社 |
CCD area image sensor |  |
|
| S11510_15 | HAMAMATSUHamamatsu Photonics Co. Ltd. 滨松光子滨松光子学株式会社 |
IR-enhanced CCD image sensors | |
|
| S11510-1106 | HAMAMATSUHamamatsu Photonics Co. Ltd. 滨松光子滨松光子学株式会社 |
Enhanced near infrared sensitivity: QE=40 (貫=1000 nm) | |
|
| S11510-1006 | HAMAMATSUHamamatsu Photonics Co. Ltd. 滨松光子滨松光子学株式会社 |
Enhanced near infrared sensitivity: QE=40 (貫=1000 nm) | |
|
| S11500-1007 | HAMAMATSUHamamatsu Photonics Co. Ltd. 滨松光子滨松光子学株式会社 |
Enhanced near infrared sensitivity: QE=40 (貫=1000 nm) back-thinned FFT-CCD | |
|
| S11510 | HAMAMATSUHamamatsu Photonics Co. Ltd. 滨松光子滨松光子学株式会社 |
Enhanced near infrared sensitivity: QE=40 (貫=1000 nm) | |
|
| S11510_10 | HAMAMATSUHamamatsu Photonics Co. Ltd. 滨松光子滨松光子学株式会社 |
Enhanced near infrared sensitivity: QE=40 (貫=1000 nm) | |
|
| S11519_15 | HAMAMATSUHamamatsu Photonics Co. Ltd. 滨松光子滨松光子学株式会社 |
Enhanced near IR sensitivity using a MEMS technology | |
|
| S1155 | SII精工 精工电子有限公司 |
HIGH RIPPLE-REJECTION LOW DROPOUT |  |
|
| S115 | YANGJIEYangzhou yangjie electronic co. ltd Yangzhou yangjie electronic co., ltd |
Schottky Rectifier |  |
型号货源
