型号描述
| 型号 | 生产品牌/企业名称 | 功能参数描述 | LOGO | 操作 |
|---|---|---|---|---|
| NAND01GW4B2AN6 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体 |
1 Gbit 2 Gbit 2112 Byte/1056 Word Page 1.8V/3V NAND Flash Memory IC FLASH 1GBIT PARALLEL 48TSOP |  |
|
| NAND01GW4B2BZA6 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体 |
1 Gbit 2 Gbit 2112 Byte/1056 Word Page 1.8V/3V NAND Flash Memory | |
|
| NAND01GW4B2CN1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体 |
1 Gbit 2 Gbit 2112 Byte/1056 Word Page 1.8V/3V NAND Flash Memory | |
|
| NAND01GW4B2CN6F | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体 |
1 Gbit 2 Gbit 2112 Byte/1056 Word Page 1.8V/3V NAND Flash Memory | |
|
| NAND01GW4B2CZA1F | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体 |
1 Gbit 2 Gbit 2112 Byte/1056 Word Page 1.8V/3V NAND Flash Memory | |
|
| NAND01GW4B2B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体 |
1 Gbit 2 Gbit 2112 Byte/1056 Word Page 1.8V/3V NAND Flash Memory | |
|
| NAND01GW4B2CZA6 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体 |
1 Gbit 2 Gbit 2112 Byte/1056 Word Page 1.8V/3V NAND Flash Memory | |
|
| NAND01GW4B2CN6F | NUMONYXSTMicroelectronics 意法半导体意法半导体 |
1 Gbit 2 Gbit 2112 Byte/1056 Word Page 1.8V/3V NAND Flash Memory |  |
|
| NAND01GW4B2AZA6 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体 |
1 Gbit 2 Gbit 2112 Byte/1056 Word Page 1.8V/3V NAND Flash Memory | |
|
| NAND01GW4B2AZB1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体 |
1 Gbit 2 Gbit 2112 Byte/1056 Word Page 1.8V/3V NAND Flash Memory | |
型号货源
