NAND04GR4B型号描述
| 型号 | 生产品牌/企业名称 | 功能参数描述 | LOGO | 操作 |
|---|---|---|---|---|
| NAND04GR4B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体 |
512 Mbit 1 Gbit 2 Gbit 4 Gbit 8 Gbit 2112 Byte/1056 Word Page 1.8V/3V NAND Flash Memory |  |
|
| NAND04GR4B2DZL6F | NUMONYXNUMONYX 恒忆恒忆 |
4 Gbit 8 Gbit 2112 byte/1056 word page multiplane architecture 1.8 V or 3 V NAND Flash memories |  |
|
| NAND04GR4B4CZL6F | NUMONYXNUMONYX 恒忆恒忆 |
4 Gbit 8 Gbit 2112 byte/1056 word page multiplane architecture 1.8 V or 3 V NAND Flash memories | |
|
| NAND04GR4B2DN6E | NUMONYXNUMONYX 恒忆恒忆 |
4 Gbit 8 Gbit 2112 byte/1056 word page multiplane architecture 1.8 V or 3 V NAND Flash memories | |
|
| NAND04GR4B2CN6F | NUMONYXNUMONYX 恒忆恒忆 |
4 Gbit 8 Gbit 2112 byte/1056 word page multiplane architecture 1.8 V or 3 V NAND Flash memories | |
|
| NAND04GR4B4DZL6F | NUMONYXNUMONYX 恒忆恒忆 |
4 Gbit 8 Gbit 2112 byte/1056 word page multiplane architecture 1.8 V or 3 V NAND Flash memories | |
|
| NAND04GR4B4DZL1F | NUMONYXNUMONYX 恒忆恒忆 |
4 Gbit 8 Gbit 2112 byte/1056 word page multiplane architecture 1.8 V or 3 V NAND Flash memories | |
|
| NAND04GR4B2CN1F | NUMONYXNUMONYX 恒忆恒忆 |
4 Gbit 8 Gbit 2112 byte/1056 word page multiplane architecture 1.8 V or 3 V NAND Flash memories | |
|
| NAND04GR4B4DN6E | NUMONYXNUMONYX 恒忆恒忆 |
4 Gbit 8 Gbit 2112 byte/1056 word page multiplane architecture 1.8 V or 3 V NAND Flash memories | |
|
| NAND04GR4B4DZL1E | NUMONYXNUMONYX 恒忆恒忆 |
4 Gbit 8 Gbit 2112 byte/1056 word page multiplane architecture 1.8 V or 3 V NAND Flash memories | |
NAND04GR4B型号货源
NAND04GR4B品牌产品资料属性