型号描述
| 型号 | 生产品牌/企业名称 | 功能参数描述 | LOGO | 操作 |
|---|---|---|---|---|
| NAND04GW3B2AN1F | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体 |
4 Gbit 8 Gbit 2112 Byte/1056 Word Page 3V NAND Flash Memories | |
|
| NAND04GW3B2AN6E | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体 |
4 Gbit 8 Gbit 2112 Byte/1056 Word Page 3V NAND Flash Memories | |
|
| NAND04GW3B2BN6E | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体 |
4 Gbit 8 Gbit 2112 Byte/1056 Word Page 3V NAND Flash Memories | |
|
| NAND04GW3B2BN6F | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体 |
4 Gbit 8 Gbit 2112 Byte/1056 Word Page 3V NAND Flash Memories | |
|
| NAND04GW3B2B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体 |
4 Gbit 8 Gbit 2112 Byte/1056 Word Page 3V NAND Flash Memories | |
|
| NAND04GW3B2AN6F | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体 |
4 Gbit 8 Gbit 2112 Byte/1056 Word Page 3V NAND Flash Memories | |
|
| NAND04GW3B2AN1E | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体 |
4 Gbit 8 Gbit 2112 Byte/1056 Word Page 3V NAND Flash Memories | |
|
| NAND04GW3B2BN6 | STMICROELECTRONICS |
|
||
| NAND04GW3B2BN1F | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体 |
4 Gbit 8 Gbit 2112 Byte/1056 Word Page 3V NAND Flash Memories | |
|
| NAND04GW3B2AN1F | NUMONYXSTMicroelectronics 意法半导体意法半导体 |
4 Gbit 8 Gbit 2112 Byte/1056 Word Page 3V NAND Flash Memories | |
型号货源

